W27E010
128K ´ 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only
´
Memory organized as 131072 8 bits that operates on a single 5 volt power supply. The W27E010
provides an electrical chip erase function.
FEATURES
·
·
·
·
High speed access time:
45/55/70/90/120 nS (max.)
+14V erase/+12V programming voltage
Fully static operation
·
·
Read operating current: 30 mA (typ.)
Erase/Programming operating current:
1 mA (typ.)
All inputs and outputs directly TTL/CMOS
compatible
·
·
Three-state outputs
·
·
Standby current: 5 mA (typ.)
Available packages: 32-pin 600 mil DIP,
450 mil SOP and PLCC
Single 5V power supply
PIN CONFIGURATIONS
BLOCK DIAGRAM
Q0
.
.
PGM
Vcc
PGM
NC
Vpp
A16
A15
A12
A7
32
31
30
29
28
27
26
25
24
23
22
21
20
19
1
OUTPUT
BUFFER
CE
CONTROL
2
Q7
OE
3
A14
A13
A8
4
5
A0
.
A6
6
CORE
ARRAY
A5
7
A9
DECODER
A11
A4
.
8
A16
A3
9
OE
A2
10
11
12
13
14
A10
V
A1
CC
CE
Q7
A0
GND
Q0
Q6
Q5
V
PP
Q1
Q2
18
17
Q4
Q3
15
16
GND
PIN DESCRIPTION
/
A
1
6
A
1
2
A
1
5
V
p
p
V
c
c
P
N
C
SYMBOL
DESCRIPTION
G
M
Address Inputs
Data Inputs/Outputs
-
A0 A16
3
2
3
1
4
3
2
1
3
0
-
Q0 Q7
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A14
A13
A8
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Chip Enable
CE
OE
A9
Output Enable
Program Enable
32-pin PLCC
A11
OE
A10
CE
Q7
PGM
V
1
8
1
9
2
0
1
7
1
4
1
5
1
6
PP
Program/Erase Supply Voltage
Power Supply
Ground
CC
V
Q
1
Q
2
G
N
D
Q
3
Q
4
Q
5
Q
6
GND
NC
No Connection
Publication Release Date: June 2000
Revision A6
- 1 -