Datasheet > W27E01

W27E01

更新时间： 2024-11-07 23:41:31

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	255K
描述
EPROM

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数据手册

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W27E01 数据手册

Preliminary W27E01

´ 8 ELECTRICALLY ERASABLE EPROM

128K

1. GENERAL DESCRIPTION

The W27E01 is a high speed, low power consumption Electrically Erasable and Programmable Read

Only Memory organized as 131,072 ´ 8 bits. It requires only one supply in the range of 5.0V ±10% in

normal read mode. The W27E01 provides an electrical chip erase function.

2. FEATURES

· Single power supply voltage:

5.0V ±10%

· +12V erase/programming voltage

· Fully static operation

· All inputs and outputs directly TTL/CMOS

· High speed access time:

compatible

70/90 nS (max.)

· Three-state outputs

· Read operating current: 30 mA (max.)

· Erase/Programming operating current:

· Available packages: 32-pin 600 mil DIP, 32-lead

30 mA (max.)

PLCC and 32-lead STSOP

· Standby current: 20 mA (max.)

3. PIN CONFIGURATIONS

4. BLOCK DIAGRAM

Vss

Vpp

A16

A15

A12

#PGM

#CE

#PGM

OUTPUT

BUFFER

CONTROL

DECODER

#OE

A14

A13

A14

A13

32-pin

PDIP

A11

32-lead PLCC

A11

#OE

A10

#CE

#OE

A10

CORE

ARRAY

#CE

A16

Vss

5. PIN DESCRIPTION

SYMBOL

A0 - A16

Q0 - Q7

#CE

#OE

#PGM

VPP

DESCRIPTION

Address Inputs

A11

#OE

A10

#CE

A13

A14

Data Inputs/Outputs

Chip Enable

Output Enable

Program Enable

Program/Erase Supply Voltage

Power Supply

#PGM

32-lead STSOP

A16

A15

A12

VDD

Vss

Ground

No Connection

Publication Release Date: May 30, 2002

Revision A1

- 1 -

12 3 4 5 6 7...15

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