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W25X40VSNI PDF预览

W25X40VSNI

更新时间: 2024-11-08 03:53:59
品牌 Logo 应用领域
华邦 - WINBOND 闪存存储内存集成电路光电二极管输出元件时钟
页数 文件大小 规格书
45页 1346K
描述
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X40VSNI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.82
Is Samacsys:N其他特性:SYNCHRONOUS MODE ALSO POSSIBLE
最大时钟频率 (fCLK):33 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.85 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:1功能数量:1
端子数量:8字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):240
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.72 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

W25X40VSNI 数据手册

 浏览型号W25X40VSNI的Datasheet PDF文件第2页浏览型号W25X40VSNI的Datasheet PDF文件第3页浏览型号W25X40VSNI的Datasheet PDF文件第4页浏览型号W25X40VSNI的Datasheet PDF文件第5页浏览型号W25X40VSNI的Datasheet PDF文件第6页浏览型号W25X40VSNI的Datasheet PDF文件第7页 
W25X10, W25X20, W25X40, W25X80  
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT  
SERIAL FLASH MEMORY WITH  
4KB SECTORS AND DUAL OUTPUT SPI  
Publication Release Date: September 22, 2006  
Preliminary - Revision I  
- 1 -  

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