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W25X20VSNIG PDF预览

W25X20VSNIG

更新时间: 2024-09-20 03:46:31
品牌 Logo 应用领域
华邦 - WINBOND 闪存存储内存集成电路光电二极管输出元件时钟
页数 文件大小 规格书
45页 1346K
描述
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X20VSNIG 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.150 INCH, GREEN, PLASTIC, SOIC-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.74Is Samacsys:N
其他特性:SYNCHRONOUS MODE ALSO POSSIBLE最大时钟频率 (fCLK):33 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.85 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.72 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

W25X20VSNIG 数据手册

 浏览型号W25X20VSNIG的Datasheet PDF文件第2页浏览型号W25X20VSNIG的Datasheet PDF文件第3页浏览型号W25X20VSNIG的Datasheet PDF文件第4页浏览型号W25X20VSNIG的Datasheet PDF文件第5页浏览型号W25X20VSNIG的Datasheet PDF文件第6页浏览型号W25X20VSNIG的Datasheet PDF文件第7页 
W25X10, W25X20, W25X40, W25X80  
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT  
SERIAL FLASH MEMORY WITH  
4KB SECTORS AND DUAL OUTPUT SPI  
Publication Release Date: September 22, 2006  
Preliminary - Revision I  
- 1 -  

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