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W25X20VSNI PDF预览

W25X20VSNI

更新时间: 2024-09-20 04:25:47
品牌 Logo 应用领域
华邦 - WINBOND 闪存存储内存集成电路光电二极管输出元件时钟
页数 文件大小 规格书
45页 1346K
描述
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X20VSNI 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.150 INCH, PLASTIC, SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.83Is Samacsys:N
其他特性:SYNCHRONOUS MODE ALSO POSSIBLE最大时钟频率 (fCLK):33 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.85 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.72 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.025 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:3.9 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

W25X20VSNI 数据手册

 浏览型号W25X20VSNI的Datasheet PDF文件第2页浏览型号W25X20VSNI的Datasheet PDF文件第3页浏览型号W25X20VSNI的Datasheet PDF文件第4页浏览型号W25X20VSNI的Datasheet PDF文件第5页浏览型号W25X20VSNI的Datasheet PDF文件第6页浏览型号W25X20VSNI的Datasheet PDF文件第7页 
W25X10, W25X20, W25X40, W25X80  
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT  
SERIAL FLASH MEMORY WITH  
4KB SECTORS AND DUAL OUTPUT SPI  
Publication Release Date: September 22, 2006  
Preliminary - Revision I  
- 1 -  

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