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W25X20LDAIZ PDF预览

W25X20LDAIZ

更新时间: 2024-09-20 04:25:47
品牌 Logo 应用领域
华邦 - WINBOND 闪存输出元件
页数 文件大小 规格书
45页 1346K
描述
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X20LDAIZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.76
其他特性:SYNCHRONOUS MODE ALSO POSSIBLE最大时钟频率 (fCLK):33 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.14 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX1
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:4.45 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.025 mA最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:7.62 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

W25X20LDAIZ 数据手册

 浏览型号W25X20LDAIZ的Datasheet PDF文件第2页浏览型号W25X20LDAIZ的Datasheet PDF文件第3页浏览型号W25X20LDAIZ的Datasheet PDF文件第4页浏览型号W25X20LDAIZ的Datasheet PDF文件第5页浏览型号W25X20LDAIZ的Datasheet PDF文件第6页浏览型号W25X20LDAIZ的Datasheet PDF文件第7页 
W25X10, W25X20, W25X40, W25X80  
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT  
SERIAL FLASH MEMORY WITH  
4KB SECTORS AND DUAL OUTPUT SPI  
Publication Release Date: September 22, 2006  
Preliminary - Revision I  
- 1 -  

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