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W25X10CLUXIG PDF预览

W25X10CLUXIG

更新时间: 2024-11-11 20:11:07
品牌 Logo 应用领域
华邦 - WINBOND 时钟光电二极管内存集成电路
页数 文件大小 规格书
47页 1083K
描述
Flash, 1MX1, PDSO8, USON-8

W25X10CLUXIG 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SON包装说明:HVSON, SOLCC8,.11,20
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.75其他特性:IT ALSO OPERATES AT 2.3 V AT 80 MHZ
最大时钟频率 (fCLK):104 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
长度:3 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX1
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:2.5/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:0.6 mm
串行总线类型:SPI最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:2 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

W25X10CLUXIG 数据手册

 浏览型号W25X10CLUXIG的Datasheet PDF文件第2页浏览型号W25X10CLUXIG的Datasheet PDF文件第3页浏览型号W25X10CLUXIG的Datasheet PDF文件第4页浏览型号W25X10CLUXIG的Datasheet PDF文件第5页浏览型号W25X10CLUXIG的Datasheet PDF文件第6页浏览型号W25X10CLUXIG的Datasheet PDF文件第7页 
W25X10CL  
2.5 / 3 / 3.3 V  
1M-BIT  
SERIAL FLASH MEMORY WITH  
4KB SECTORS AND DUAL I/O SPI  
Publication Release Date: February 17, 2014  
Revision G  
- 1 -  

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