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W25Q80BWSNIG PDF预览

W25Q80BWSNIG

更新时间: 2024-11-06 08:08:59
品牌 Logo 应用领域
华邦 - WINBOND 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
71页 2125K
描述
1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80BWSNIG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:2.11Is Samacsys:N
最大时钟频率 (fCLK):80 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

W25Q80BWSNIG 数据手册

 浏览型号W25Q80BWSNIG的Datasheet PDF文件第2页浏览型号W25Q80BWSNIG的Datasheet PDF文件第3页浏览型号W25Q80BWSNIG的Datasheet PDF文件第4页浏览型号W25Q80BWSNIG的Datasheet PDF文件第5页浏览型号W25Q80BWSNIG的Datasheet PDF文件第6页浏览型号W25Q80BWSNIG的Datasheet PDF文件第7页 
W25Q80BW  
1.8V 8M-BIT  
SERIAL FLASH MEMORY WITH  
DUAL AND QUAD SPI  
Publication Release Date: January 26, 2011  
Preliminary - Revision A  
- 1 -  

W25Q80BWSNIG 替代型号

型号 品牌 替代类型 描述 数据表
W25Q80EWSNIG WINBOND

完全替代

Flash, 8MX1, PDSO8, SOIC-8
M25P80-VMW3P NUMONYX

功能相似

8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface
W25X80AVSNIG WINBOND

功能相似

1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

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