是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | 0.300 INCH, GREEN, SOIC-16 |
针数: | 16 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.72 | 最大时钟频率 (fCLK): | 80 MHz |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-G16 | 长度: | 10.31 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 1 | 功能数量: | 1 |
端子数量: | 16 | 字数: | 67108864 words |
字数代码: | 64000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 105 °C | 最低工作温度: | -40 °C |
组织: | 64MX1 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP16,.4 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 电源: | 3/3.3 V |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
座面最大高度: | 2.64 mm | 串行总线类型: | SPI |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.025 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 7.49 mm |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
W25Q64CVSFIG | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVSFIP | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVSSAG | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVSSAP | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVSSIG | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVSSIP | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVSTIG | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVTBIG | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVTCAG | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q64CVTCAP | WINBOND |
获取价格 |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |