是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | 0.208 INCH, GREEN, PLASTIC, SOIC-8 | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 最大时钟频率 (fCLK): | 80 MHz |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | S-PDSO-G8 | 长度: | 5.28 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | FLASH |
内存宽度: | 1 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX1 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.3 |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8 V | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 2.16 mm |
串行总线类型: | SPI | 最大待机电流: | 0.00001 A |
子类别: | Flash Memories | 最大压摆率: | 0.025 mA |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NOR TYPE | 宽度: | 5.28 mm |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
W25Q40BWSVIE | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40BWSVIG | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40BWUXIE | WINBOND |
获取价格 |
Flash, 4MX1, PDSO8, 2 X 3 MM, 0.60 MM HEIGHT, GREEN, USON-8 | |
W25Q40BWUXIG | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40BWUXIP | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40BWZPIE | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40BWZPIG | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40BWZPIP | WINBOND |
获取价格 |
1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q40CL | WINBOND |
获取价格 |
SERIAL FLASH MEMORY WITH 4KB SECTORS, DUAL AND QUAD SPI | |
W25Q40CLSNIG | WINBOND |
获取价格 |
Flash, 4MX1, PDSO8, SOIC-8 |