是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SOP, SOP16,.4 |
针数: | 16 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.83 | 最大时钟频率 (fCLK): | 50 MHz |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-G16 | 长度: | 10.31 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | FLASH |
内存宽度: | 1 | 功能数量: | 1 |
端子数量: | 16 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 16MX1 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP16,.4 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 电源: | 3/3.3 V |
编程电压: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 2.64 mm | 串行总线类型: | SPI |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.018 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 7.49 mm |
写保护: | HARDWARE/SOFTWARE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
W25Q16CLSNIG | WINBOND |
获取价格 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CLSNIP | WINBOND |
获取价格 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CLSSIG | WINBOND |
获取价格 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CLSSIP | WINBOND |
获取价格 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CLZPIG | WINBOND |
获取价格 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CLZPIP | WINBOND |
获取价格 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CV | WINBOND |
获取价格 |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CV_13 | WINBOND |
获取价格 |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CVDAAG | WINBOND |
获取价格 |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |
W25Q16CVDAAP | WINBOND |
获取价格 |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |