Datasheet > W24L257Q70LE

W24L257Q70LE

更新时间： 2024-11-13 23:41:31

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
11页	213K
描述
x8 SRAM

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中文翻译

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数据手册

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W24L257Q70LE 数据手册

W24L257

´ 8 CMOS STATIC RAM

32K

GENERAL DESCRIPTION

The W24L257 is a normal-speed, very low-power CMOS static RAM organized as 32768 ´ 8 bits that

operates on a wide voltage range from 3V to 5.5V power supply. This device is manufactured using

Winbond's high performance CMOS technology.

FEATURES

· Low power consumption:

· Access time: 70 nS

· 3.3V/5V power supply

· Fully static operation

· All inputs and outputs directly TTL compatible

· Three-state outputs

· Battery back-up operation capability

· Data retention voltage: 2V (min.)

· Packaged in 330 mil SOP, and standard type

one STSOP (8 mm ´ 13.4 mm)

PIN CONFIGURATIONS

BLOCK DIAGRAM

CLK GEN.

PRECHARGE CKT.

A12

VDD

A14

#WE

A13

A12

CORE CELL ARRAY

512 ROWS

32 X 8 COLUMNS

A11

A13

#OE

A10

I/O1

I/O8

I/O CKT.

DATA

CNTRL

COLUMN DECODER

CLK

GEN.

I/O8

I/O7

I/O6

I/O5

I/O4

A0 A8

A10

A11

#WE

I/O1

I/O2

I/O3

#CS

#OE

PIN DESCRIPTION

SYMBOL

DESCRIPTION

#OE

A11

A13

A10

Address Inputs

A0 - A14

I/O1 - I/O8

#CS

I/O8

I/O7

I/O6

I/O5

I/O4

Data Inputs/Outputs

Chip Select Input

Write Enable Input

Output Enable Input

Power Supply

VDD

A14

A12

28-pin

TSOP

I/O3

I/O2

I/O1

#WE

#OE

VDD

VSS

Ground

No Connection

Publication Release Date: October 3, 2001

Revision A5

- 1 -

12 3 4 5 6 7...11

中文翻译

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