Datasheet > W15NB50

W15NB50

更新时间： 2024-11-21 08:09:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	112K
描述
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

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中文翻译

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W15NB50 数据手册

STW15NB50

STH15NB50FI

N-CHANNEL 500V - 0.33Ω - 14.6A -

T0-247/ISOWATT218 PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STW15NB50

STH15NB50FI

500 V

< 0.36 Ω

14.6 A

10.5 A

■

TYPICAL R_DS(on)= 0.33 Ω

EXTREMELY HIGH dv/dt CAPABILITY

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATECHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

TO-247

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STW15NB50 STH15NB50FI

Unit

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

500

± 30

Drain Current (continuous) at T_c= 25 ^oC

14.6

9.2

10.5

6.6

I_D

Drain Current (continuous) at T_c= 100 C

I_DM(• )

P_tot

Drain Current (pulsed)

58.4

190

0.64

58.4

Total Dissipation at T_c= 25 C

Derating Factor

1.52

W/^oC

V/ns

dv/dt(1) Peak Diode Recovery voltage slope

4000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

^oC

Max. Operating Junction Temperature

1/9

June 1998

12 3 4 5 6 7...9

中文翻译

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