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W10G

更新时间: 2024-11-21 14:52:15
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描述
Bridge Rectifiers

W10G 数据手册

 浏览型号W10G的Datasheet PDF文件第2页 
TH09/2479  
IATF 0113686  
TH97/2478  
SGS TH07/1033  
www.eicsemi.com  
GLASS PASSIVATED SINGLE-PHASE  
SILICON BRIDGE RECTIFIERS  
W005G - W10G  
PRV : 50 - 1000 Volts  
Io : 1.5 Ampere  
WOB  
0.39 (10.0)  
0.31 (7.87)  
FEATURES :  
* Glass passivated chip  
* High case dielectric strength  
* High surge current capability  
* High reliability  
0.22 (5.59)  
0.18 (4.57)  
AC  
+
-
1.00 (25.4)  
MIN.  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Pb / RoHS Free  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-0 rate flame retardant  
* Terminals : Plated leads solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
-
AC  
+
0.22 (5.59)  
0.18 (4.57)  
AC  
0.22 (5.59)  
0.18 (4.57)  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL W005G W01G W02G W04G W06G W08G W10G UNIT  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Current  
0.375" (9.5 mm) lead length  
IF(AV)  
1.5  
50  
A
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Rating for fusing ( t < 8.3 ms. )  
IFSM  
A
I2t  
VF  
IR  
A2S  
V
10  
Maximum Forward Voltage per Diode at IF = 1.0 A  
1.0  
5
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
mA  
mA  
pf  
IR(H)  
CJ  
0.5  
14  
Ta = 125 °C  
Typical Junction Capacitance per Diode (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
36  
°C/W  
°C  
RqJA  
TJ  
- 50 to + 150  
- 50 to + 150  
TSTG  
°C  
Notes :  
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.  
Page 1 of 2  
Rev. 02 : April 1, 2005  

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