Datasheet > VX80170PW

VX80170PW

更新时间： 2024-09-22 14:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	127K
描述
Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at IF = 5.0 A

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VX80170PW 数据手册

VX80170PW

Vishay General Semiconductor

www.vishay.com

Dual High Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.52 V at I_F= 10 A

FEATURES

Available

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum,

10 s per JESD 22-B106

TO-247AD 3L

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

PIN 1

PIN 3

PIN 2

CASE

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, industrial, and

automotive application.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 40 A

170 V

V_RRM

I_FSM

500 A

MECHANICAL DATA

Case: TO-247AD 3L

V_Fat I_F= 40 A (T_J= 125 °C)

T_Jmax.

0.68 V

175 °C

Package

TO-247AD 3L

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Circuit configuration

Common cathode

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: as marked

Mounting torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VX80170PW

UNIT

Maximum repetitive peak reverse voltage

V_RRM

170

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

500

(1)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

°C

T_STG

Note

(1)

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Revision: 12-Apr-2023

Document Number: 87198

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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