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VTO70-16IO7 PDF预览

VTO70-16IO7

更新时间: 2024-11-05 03:18:55
品牌 Logo 应用领域
IXYS 栅极三相整流桥触发装置可控硅整流器局域网
页数 文件大小 规格书
2页 115K
描述
Three Phase Rectifier Bridge

VTO70-16IO7 技术参数

是否无铅:不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-XUFM-D11Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.67
Is Samacsys:N其他特性:FAST
外壳连接:ISOLATED配置:3 PHASE BRIDGE
最大直流栅极触发电流:100 mA最大直流栅极触发电压:1.5 V
快速连接描述:3AK-CA-CK螺丝端子的描述:0
最大维持电流:200 mAJESD-30 代码:R-XUFM-D11
JESD-609代码:e4最大漏电流:5 mA
通态非重复峰值电流:550 A元件数量:6
端子数量:11最大通态电流:70000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:36 A
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Gold (Au) - with Nickel (Ni) barrier端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

VTO70-16IO7 数据手册

 浏览型号VTO70-16IO7的Datasheet PDF文件第2页 
VVZ 70 VVZF 70  
VTO 70 VTOF 70  
Three Phase  
IdAV = 70 A  
Rectifier Bridge  
VRRM = 800-1600 V  
Preliminary data  
A
A
2
3
1
2
3
1
C
D
E
C
D
E
VRSM  
VDSM  
VRRM  
VDRM  
Type  
B
A
B
A
V
V
VVZ 70  
VVZF 70  
800  
1200  
1400  
1600  
800  
1200  
1400  
1600  
xxx 70-08io7  
xxx 70-12io7  
xxx 70-14io7  
xxx 70-16io7  
2
5
2
5
3
4
1
6
3
1
6
C
D
E
C
D
E
4
xxx = type  
B
B
VTO 70  
VTOF 70  
Features  
Symbol  
Test Conditions  
Maximum Ratings  
Package with copper base plate  
Isolation voltage 3000 V~  
Planar passivated chips  
Low forward voltage drop  
¼" fast-on power terminals  
IdAV  
IdAVM  
IFRMS, ITRMS  
¬
¬
TK = 85°C, module  
module  
per leg  
70  
70  
36  
A
A
A
IFSM, ITSM  
TVJ = 45°C;  
VR = 0 V  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
550  
600  
A
A
Applications  
TVJ = TVJM  
VR = 0 V  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
500  
550  
A
A
A2s  
A2s  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
I2t  
TVJ = 45°C  
VR = 0 V  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1520  
1520  
T
VJ = TVJM  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1250  
1250  
A2s  
A2s  
F2  
Advantages  
VR = 0 V  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
(di/dt)cr  
TVJ = 125°C  
repetitive, IT = 50 A  
150  
A/µs  
f = 50 Hz, tP = 200 µs  
VD = 2/3 VDRM  
IG = 0.3 A,  
non repetitive, IT = 1/2 • IdAV  
500  
1000  
10  
A/µs  
V/µs  
V
Small and light weight  
diG/dt = 0.3 A/µs  
(dv/dt)cr  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ; method 1 (linear voltage rise)  
Dimensions in mm (1 mm = 0.0394")  
VRGM  
PGM  
TVJ = TVJM  
IT = ITAVM  
tp = 30 µs  
tp = 500 µs  
tp = 10 ms  
10  
5
1
W
W
W
W
PGAVM  
0.5  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
IISOL 1 mA  
Md  
Mounting torque  
(M5)  
(10-32 UNF)  
5 ± 15 %  
44 ± 15 %  
50  
Nm  
lb.in.  
g
Weight  
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated  
¬ for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and  
dimensions.  
© 1999 IXYS All rights reserved  
F2 - 51  

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