Datasheet > VSSA210-M3/5AT

VSSA210-M3/5AT

更新时间： 2024-11-25 22:54:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	94K
描述
DIODE SCHOTTKY 100V 1.7A DO214AC

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VSSA210-M3/5AT 数据手册

VSSA210

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020, LF maximum peak

SMA (DO-214AC)

Cathode Anode

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

100 V

60 A

Case: SMA (DO-214AC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_RRM

I_FSM

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test

E_AS

24 mJ

0.56 V

150 °C

V_Fat I_F= 2.0 A

T_Jmax.

Polarity: color band denotes the cathode end

Package

SMA (DO-214AC)

Single

Circuit configurations

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSSA210

V2B

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

100

(1)

I_F

2.0

Maximum DC forward current

(2)

I_F

1.7

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C

I_RRM

1.0

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 03-Nov-2020

Document Number: 89137

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与VSSA210-M3/5AT相关器件

型号	品牌	获取价格	描述	数据表
VSSA210-M3/61T	VISHAY	获取价格	DIODE SCHOTTKY 100V 1.7A DO214AC
VSSA210-M3-5AT	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA210-M3-61T	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA310	TAYCHIPST	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA310S	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA310S_12	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA310S_15	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA310S-E3/5AT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.7A, 100V V(RRM), Silicon, DO-214AC, ROHS
VSSA310S-E3/61T	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.7A, 100V V(RRM), Silicon, DO-214AC, ROHS
VSSA310S-E3-5AT	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier

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