Datasheet > VSS8D3M6HM3/I

VSS8D3M6HM3/I

更新时间： 2024-11-26 02:51:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	116K
描述
Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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VSS8D3M6HM3/I 数据手册

VSS8D3M6

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

eSMP Series

Available

• Low-profile package

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Compatible to SOD-128 package case outline

• Material categorization: for definitions of compliance

Top View

Bottom View

please see www.vishay.com/doc?99912

SlimSMAW (DO-221AD)

TYPICAL APPLICATIONS

Cathode

Anode

For use in high frequency inverters, freewheeling, DC/DC

converters, and polarity protection in commercial, industrial,

and automotive applications.

click logo to get started

DESIGN SUPPORT TOOLS

Models

MECHANICAL DATA

Available

Case: SlimSMAW (DO-221AD)

Molding compound meets UL 94 V-0 flammability rating 

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

3 A

60 V

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

AEC-Q101 qualified

I_FSM

60 A

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_Fat I_F= 3 A (125 °C)

T_Jmax.

0.47 V

175 °C

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Package

SlimSMAW (DO-221AD)

Single

Polarity: color band denotes cathode end

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSS8D3M6

UNIT

Device marking code

V3M6

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum average forward rectified current (fig.1)

(2)

I_F(AV)

2.5

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm AL PCB pad area

Free air, mounted on recommended copper pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 21-Jan-2019

Document Number: 87412

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与VSS8D3M6HM3/I相关器件

型号	品牌	获取价格	描述	数据表
VSS8D3M6-M3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M6-M3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M10	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M10HM3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M10HM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M10-M3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M10-M3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M12	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M12HM3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D5M12HM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho

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