Datasheet > VSS8D3M12

VSS8D3M12

更新时间： 2024-11-26 02:51:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	115K
描述
Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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VSS8D3M12 数据手册

VSS8D3M12

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

Available

eSMP Series

• Low-profile package

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Compatible to SOD-128 package case outline

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

TYPICAL APPLICATIONS

SlimSMAW (DO-221AD)

For use in high frequency inverters, freewheeling, DC/DC

converters, and polarity protection in commercial, industrial,

and automotive applications.

Cathode

Anode

click logo to get started

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Models

Case: SlimSMAW (DO-221AD)

Available

Molding compound meets UL 94 V-0 flammability rating 

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

PRIMARY CHARACTERISTICS

I_F(AV)

3 A

halogen-free, RoHS-compliant, and

V_RRM

120 V

60 A

I_FSM

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_Fat I_F= 3 A (125 °C)

T_Jmax.

0.61 V

175 °C

H3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SlimSMAW (DO-221AD)

Single

Polarity: color band denotes cathode end

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSS8D3M12

UNIT

Device marking code

3M12

Maximum repetitive peak reverse voltage

V_RRM

120

(1)

I_F(AV)

Maximum average forward rectified current (fig.1)

(2)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load

Operating junction temperature range

I_FSM

(3)

T_J

-40 to +175

-55 to +175

°C

Storage temperature range

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm AL PCB pad area

Free air, mounted on recommended copper pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 29-Oct-2018

Document Number: 87414

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与VSS8D3M12相关器件

型号	品牌	获取价格	描述	数据表
VSS8D3M12HM3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M12HM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M12-M3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M12-M3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M15	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M15HM3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M15HM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M15-M3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M15-M3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
VSS8D3M6	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho

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