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VSS8D2M10-M3/H

更新时间： 2024-11-26 02:51:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 115K
描述
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

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VSS8D2M10  
Vishay General Semiconductor  
www.vishay.com  
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier  
FEATURES  
®
eSMP Series  
Available  
• Low-profile package  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
• Compatible to SOD-128 package case outline  
• Material categorization: for definitions of compliance  
Top View  
Bottom View  
please see www.vishay.com/doc?99912  
SlimSMAW (DO-221AD)  
TYPICAL APPLICATIONS  
Cathode  
Anode  
For use in high frequency inverters, freewheeling, DC/DC  
converters, and polarity protection in commercial, industrial,  
and automotive applications.  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
MECHANICAL DATA  
Available  
Case: SlimSMAW (DO-221AD)  
Molding compound meets UL 94 V-0 flammability rating   
Base P/N-M3 - halogen-free, RoHS-compliant  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 A  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
VRRM  
IFSM  
100 V  
50 A  
AEC-Q101 qualified  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
VF at IF = 2 A (TA = 125 °C)  
TJ max.  
0.56 V  
175 °C  
M3 and HM3 suffix meet JESD 201 class 2 whisker test  
Package  
SlimSMAW (DO-221AD)  
Single  
Polarity: color band denotes cathode end  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VSS8D2M10  
UNIT  
Device marking code  
2M10  
100  
2
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig.1)  
VRRM  
V
A
(1)  
IF(AV)  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
50  
A
(2)  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +175  
-55 to +175  
°C  
TSTG  
Notes  
(1)  
Free air, mounted on recommended copper pad area  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA  
(2)  
Revision: 21-Jan-2019  
Document Number: 87442  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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