VSMY3850-GS08

更新时间： 2024-01-31 12:51:17

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	134K
描述
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VSMY3850-GS08 数据手册

VSMY3850

Vishay Semiconductors

www.vishay.com

High Speed Infrared Emitting Diode, 850 nm,

Surface Emitter Technology

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength: _p= 850 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = ꢀ0ꢁ

• Suitable for high pulse current operation

94 8553

• Floor life: 1ꢀ8 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/9ꢀ/EC

Note

** Please see document “Vishay Material Category Policy”:

DESCRIPTION

www.vishay.com/doc?99902

VSMY3850 is an infrared, 850 nm emitting diode based on

surface emitter technology with high radiant intensity, high

optical power and high speed, molded in a PLCC-2 package

for surface mounting (SMD).

RELEASED FOR APPLICATIONS

Infrared radiation source for operation with CMOS cameras

(illumination)

• High speed IR data transmission

• IR touch panels

• 3D TV

• Light curtain

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)



_P(nm)

t_r(ns)

VSMY3850

ꢀ0

850

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

VSMY3850-GS08

VSMY3850-GS18

PACKAGING

REMARKS

PACKAGE FORM

PLCC-2

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢁC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

100

Forward current

I_F

Pulse peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p 100 μs

I_FM

200

t_p= 100 μs

I_FSM

P_V

200

ꢁC

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_j

100

T_amb

T_stg

T_sd

- 40 to + 85

ꢁC

- 40 to + 100

2ꢀ0

ꢁC

acc. figure 7, J-STD-020

J-STD-051, soldered on PCB

R_thJA

250

K/W

Rev. 1.2, 09-Sep-11

Document Number: 83399

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与VSMY3850-GS08相关器件

型号	品牌	获取价格	描述	数据表
VSMY3850-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3850X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY3890X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology
VSMY3940X01	VISHAY	获取价格	High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
VSMY3940X01-GS08	VISHAY	获取价格	High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
VSMY3940X01-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
VSMY4850X01	VISHAY	获取价格	High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY5850	VISHAY	获取价格	High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY5850X01	VISHAY	获取价格	High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY5890	VISHAY	获取价格	High Speed Infrared Emitting Diodes, 890 nm, Surface Emitter Technology

与VSMY3850-GS08相关文章

采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

3
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

17
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

81
REF03GPZ资料解读：主要特征、技术参数、应用场景
2024-08-05

141

产品中心

服务支持

精选活动

关于我们

帮助中心

VSMY3850-GS08

VSMY3850-GS08 数据手册

与VSMY3850-GS08相关器件

与VSMY3850-GS08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VSMY3850-GS08

VSMY3850-GS08 数据手册

与VSMY3850-GS08相关器件

与VSMY3850-GS08相关文章

您还可以找

您在本页遇到什么问题？