VSMB14940
Vishay Semiconductors
www.vishay.com
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: = 9°
• Suitable for high pulse current operation
DESCRIPTION
• Floor life: 168 h, MSL 3, according to J-STD-020
VSMB14940 is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology
with high radiant power and high speed, molded in
clear, untinted PCB based package (with lens) for surface
mounting (SMD).
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter for remote control
• IR touch panels
• Photointerrupters
• Optical switch
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
(deg)
p (nm)
tr (ns)
VSMB14940
35
9
940
15
Note
•
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Tape and reel
REMARKS
MOQ: 1500 pcs, 1500 pcs/reel
PACKAGE FORM
VSMB14940
Side view
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
Forward current
IF
70
mA
mA
mW
°C
Surge forward current
Power dissipation
tp = 100 μs
IFSM
PV
500
112
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
Tj
100
Tamb
Tstg
Tsd
-40 to +85
-40 to +100
260
°C
°C
According fig. 10, J-STD-020
J-STD-051, soldered on PCB
°C
RthJA
580
K/W
Rev. 1.2, 19-Nov-15
Document Number: 84210
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000