Datasheet > VSMA1085250

VSMA1085250

更新时间： 2023-12-06 20:06:30

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	194K
描述
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

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VSMA1085250 数据手册

VSMA1085250

Vishay Semiconductors

www.vishay.com

High Power Infrared Emitting Diode, 850 nm,

Surface Emitter Technology

FEATURES

• Package type: surface-mount

• Package form: high power SMD with lens

• Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.9

• Centroid wavelength: λ_centroid= 850 nm

• Angle of half intensity: ϕ = 28°

• Designed for high drive currents: up to 1.5 A (DC)

and up to 5 A (pulsed)

• Low thermal resistance: 6 K/W < R_thJSP< 9 K/W

• ESD: up to 5 kV (according to ANSI / ESDA /

JEDEC^®JS-001)

• Floor life: 168 h, MSL 3, according to J-STD-020E

• Lead (Pb)-free reflow soldering

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

APPLICATIONS

DESCRIPTION

• Driver and occupant monitoring

• Eye tracking

As part of the SurfLight^TMportfolio, the VSMA1085250 is

an infrared, 850 nm emitting diode. It features a double

stack emitter chip for highest radiant power. The 42 mil chip

size allows 1.5 A DC operation and supports pulsed currents

up to 5.0 A.

• Safety and security, CCTV

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr) at I_F= 1.0 A

ϕ (°)

λ_p(nm)

λ_centroid(nm)

t_r(ns)

VSMA1085250

1350

860

850

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

MOQ: 600 pcs, 600 pcs/reel

PACKAGE FORM

VSMA1085250

Tape and reel

High power with lens

Note

•

MOQ: minimum order quantity

Rev. 1.4, 08-Jul-2022

Document Number: 80297

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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