VSKCU300/06PbF
Vishay Semiconductors
INT-A-PAK Power Modules Ultrafast Diodes, 300 A
FEATURES
• Electrically insulated by DBC ceramic
• 3500 VRMS isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
INT-A-PAK
• Case style INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV) at TC
300 A at 48 °C
600 V
VR
t
rr (typical)
130 ns
IF(DC) at TC
230 A at 100 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
600
UNITS
Cathode to anode voltage
VR
V
TC = 25 °C
C = 100 °C
435
Continuous forward current per leg
Single pulse forward current
IF
T
230
A
IFSM
PD
Limited by junction temperature
TC = 25 °C
TBD
781
Maximum power dissipation per leg
W
TC = 100 °C
313
Operating junction and storage
temperature range
TJ, TStg
VINS
- 40 to 150
3500
°C
V
50 Hz, circuit to base,
all terminals shorted, t = 1 s
RMS insulation voltage
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
V
Cathode to anode breakdown voltage
VBR
IR = 500 μA
600
IF = 150 A
-
-
-
-
-
1.23
1.43
1.11
1.39
-
1.53
1.96
1.29
1.73
50
IF = 300 A
Forward voltage drop per leg
VFM
IF = 150 A, TJ = 125 °C
IF = 300 A, TJ = 125 °C
TJ = 150 °C, VR = 600 V
Maximum reverse leakage current
IRM
mA
Document Number: 93155
Revision: 18-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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