VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
HEXFRED® Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
FEATURES
• Electrically isolated: DCB base plate
• Standard JEDEC® package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Case style INT-A-PAK
• Designed and qualified for industrial level
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
PRIMARY CHARACTERISTICS
• Product reliability results valid for TJ = 150 °C
• Recommended operation temperature Top = 150 °C
VR
1200 V
2.18 V
VF (typical) at 300 A at 25 °C
t
rr (typical) at 45 A
233 ns
I
F(DC) at TC
Package
300 A at 60 °C
INT-A-PAK
Single diode
Circuit configuration
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1200
UNITS
Cathode to anode voltage
VR
V
TC = 25 °C
C = 60 °C
375
Continuous forward current
Single pulse forward current
Maximum power dissipation
IF
T
300
A
IFSM
PD
TJ = 25 °C
TC = 25 °C
TC = 60 °C
2400
1040
W
V
750
RMS isolation voltage
VISOL
TJ
50 Hz, circuit to base, all terminal shorted, t = 1 s
3500
Junction temperature range
Storage temperature range
-40 to +150
-40 to +150
°C
TStg
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
UNITS
Cathode to anode breakdown voltage
VBR
IR = 500 μA
1200
-
IF = 300 A
-
-
-
-
2.18
2.24
0.06
-
2.23
2.47
0.2
20
V
Maximum forward voltage
VFM
IRM
IF = 300 A, TJ = 150 °C
VR = 1200 V
Maximum reverse leakage current
mA
TJ = 150 °C, VR = 1200 V
Revision: 09-Nov-2020
Document Number: 94670
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000