Datasheet > VS-VSKDU12PbF

VS-VSKDU12PbF

更新时间： 2024-11-28 01:19:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	176K
描述
Simplified mechanical designs, rapid assembly

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数据手册

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VS-VSKDU12PbF 数据手册

VS-VSKDU162/12PbF

www.vishay.com

Vishay Semiconductors

HEXFRED^®Ultrafast Diodes, 100 A

(New INT-A-PAK Power Modules)

FEATURES

• Electrically isolated: DBC base plate

• Standard JEDEC^®package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Case style New INT-A-PAK

INT-A-PAK

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY



V_R

1200 V

2.5 V

V_F(typical)

_rr(typical)

150 ns

_F(DC)at T_C

Package

Circuit

110 A at 100 °C

INT-A-PAK

Two diodes doubler circuit

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

1200

205

UNITS

Cathode to anode voltage

V_R

T_C= 25 °C

_C= 100 °C

Continuous forward current

Single pulse forward current

Maximum power dissipation

RMS isolation voltage

I_F

110

I_FSM

P_D

Limited by junction temperature

T_C= 25 °C

800

695

_C= 100 °C

280

V_ISOL

50 Hz, circuit to base, all terminal shorted, t = 1 s

3500

Operating junction and storage

temperature range

T_J, T_Stg

-40 to +150

°C

ELECTRICAL SPECIFICATIONS PER LEG (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

Cathode to anode

breakdown voltage

V_BR

I_R= 100 μA

1200

I_F= 100 A

I_F= 160 A

2.5

2.9

3.2

Maximum forward voltage

V_FM

I_RM

3.9

Maximum reverse leakage current

T_J= 150 °C, V_R= 1200 V

Revision: 11-Apr-14

Document Number: 94512

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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