Datasheet > VS-VSKDF500/06PbF

VS-VSKDF500/06PbF

更新时间： 2023-12-06 20:06:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	178K
描述
FRED Pt? Gen 4 Doubler Ultrafast Diode, 500 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-VSKDF500/06PbF 数据手册

浏览型号VS-VSKDF500/06PbF的Datasheet PDF文件第2页

浏览型号VS-VSKDF500/06PbF的Datasheet PDF文件第3页

浏览型号VS-VSKDF500/06PbF的Datasheet PDF文件第4页

浏览型号VS-VSKDF500/06PbF的Datasheet PDF文件第5页

VS-VSKDF500/06PbF

www.vishay.com

Vishay Semiconductors

FRED Pt^®Gen 4 Doubler Ultrafast Diode, 500 A

(INT-A-PAK Power Modules)

FEATURES

• Gen 4 FRED Pt^®dices technology

• Ultrasoft reverse recovery characteristics

• Low I_RRMand reverse recovery charge

• Very low forward voltage drop

• 175 °C operating junction temperature

• UL approved file E78996 for application with maximum

case temperature up to 140 °C

• Large creepage distances

• Designed and qualified for industrial level

INT-A-PAK

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

DESCRIPTION

V_R

600 V

Gen 4 FRED Pt technology, state of the art, ultra low V_F, soft

switching optimized for IGBT F/W diode.

_F(AV)at T_C

500 A at 55 °C

The minimized conduction loss, optimized storage charge,

and low recovery current, minimized the switching losses

and reduce the over dissipation in the switching element

and snubbers.

t_rrat 25 °C

Type

104 ns

Modules - diode, FRED Pt^®

INT-A-PAK

Package

Circuit configuration

Diode doubler circuit

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

UNITS

Cathode to anode voltage

V_R

T_C= 25 °C

_C= 90 °C

772

Continuous forward current

Single pulse forward current

Maximum power dissipation

I_F

519

t_p= 10 ms, 50 Hz, sine half wave,

initial T_J= 175 °C

I_FSM

P_D

4140

T_C= 25 °C

T_C= 90 °C

1363

772

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-40 to +150

°C

T_Stg

50 Hz, circuit to base, 

all terminals shorted, t = 1 s

RMS insulation voltage

V_INS

3500

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode breakdown voltage

V_BR

I_R= 500 μA

600

I_F= 250 A

1.25

1.45

1.06

1.35

I_F= 500 A

1.66

Forward voltage drop

V_FM

I_F= 250 A, T_J= 150 °C

I_F= 500 A, T_J= 150 °C

V_R= 600 V

μA

Reverse leakage current

I_RM

T_J= 150 °C, V_R= 600 V

2.5

Revision: 11-Mar-2019

Document Number: 96505

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

下载PDF

与VS-VSKDF500/06PbF相关器件

型号	品牌	描述	获取价格	数据表
VS-VSKDF600/06PbF	VISHAY	FRED Pt? Gen 4 Doubler Ultrafast Diode, 600 A	获取价格
VS-VSKDS030	VISHAY	Low forward voltage drop	获取价格
VS-VSKDS045	VISHAY	Vishay Semiconductors	获取价格
VS-VSKDS060	VISHAY	High frequency operation	获取价格
VS-VSKDS100	VISHAY	Low forward voltage drop	获取价格
VS-VSKDS150	VISHAY	Low forward voltage drop	获取价格