Datasheet > VS-UFL250CB60

VS-UFL250CB60

更新时间： 2023-12-06 20:03:36

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	149K
描述
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 250 A

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VS-UFL250CB60 数据手册

VS-UFL250CB60

Vishay Semiconductors

www.vishay.com

Not Insulated SOT-227 Power Module

Ultrafast Rectifier, 250 A

FEATURES

• Not insulated package

• Ultrafast reverse recovery

• Ultrasoft reverse recovery current shape

• Optimized for power conversion: 

welding and industrial SMPS applications

• Plug-in compatible with other SOT-227 packages

• Easy to assemble

SOT-227

• Direct mounting to heatsink

Anode

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

The VS-UFL250CB60 not insulated modules integrate two

state of the art ultrafast recovery rectifiers in the compact,

industry standard SOT-227 package. The planar structure of

the diodes, and the platinum doping life time control,

provide a ultrasoft recovery current shape, together with the

best overall performance, ruggedness and reliability

characteristics.

Base common cathode

PRIMARY CHARACTERISTICS

V_R

600 V

250 A

44 ns

_F(AV)at T_C= 119 °C per module ⁽¹⁾

These devices are thus intended for high frequency

applications in which the switching energy is designed not

to be predominant portion of the total energy, such as in the

output rectification stage of welding machines, SMPS,

DC/DC converters. Their extremely optimized stored charge

and low recovery current reduce both over dissipation in the

switching elements (and snubbers) and EMI/RFI.

t_rr

Type

Modules - Diode FRED Pt^®

Package

SOT-227 not insulated

Note

(1)

All 4 anode terminals connected

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 135 °C

MAX.

600

UNITS

Cathode to anode voltage

V_R

I_F

Continuous forward current per diode

Single pulse forward current per diode

Maximum power dissipation per module

Operating junction and storage temperatures

130

(1)

I_FSM

T_C= 25 °C

1500

P_D

T_C= 135 °C

421

T_J, T_Stg

-55 to +175

°C

Note

(1)

10 ms sine or 6 ms rectangular pulse

Revision: 10-Sep-2019

Document Number: 93808

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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