5秒后页面跳转
VS-SD803C10S10C PDF预览

VS-SD803C10S10C

更新时间: 2024-11-28 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 快速恢复大电源高压快速恢复二极管高压快速恢复大电源高功率电源
页数 文件大小 规格书
8页 353K
描述
Rectifier Diode, 1 Phase, 1 Element, 845A, 1000V V(RRM), Silicon,

VS-SD803C10S10C 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:18 weeks
风险等级:5.76其他特性:FREE WHEELING DIODE, SNUBBER DIODE
应用:HIGH VOLTAGE FAST RECOVERY HIGH POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.89 VJESD-30 代码:O-CEDB-N2
最大非重复峰值正向电流:11830 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:845 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
最大反向电流:45000 µA最大反向恢复时间:1 µs
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-SD803C10S10C 数据手册

 浏览型号VS-SD803C10S10C的Datasheet PDF文件第2页浏览型号VS-SD803C10S10C的Datasheet PDF文件第3页浏览型号VS-SD803C10S10C的Datasheet PDF文件第4页浏览型号VS-SD803C10S10C的Datasheet PDF文件第5页浏览型号VS-SD803C10S10C的Datasheet PDF文件第6页浏览型号VS-SD803C10S10C的Datasheet PDF文件第7页 
VS-SD803C..C Series  
www.vishay.com  
Vishay Semiconductors  
Fast Recovery Diodes  
(Hockey PUK Version), 845 A  
FEATURES  
• High power FAST recovery diode series  
• 1.0 μs to 1.5 μs recovery time  
• High voltage ratings up to 1600 V  
• High current capability  
• Optimized turn-on and turn-off characteristics  
• Low forward recovery  
• Fast and soft reverse recovery  
• Press PUK encapsulation  
• Hockey PUK version case style B-43  
• Maximum junction temperature 125 °C  
• Designed and qualified for industrial level  
B-43  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
IF(AV)  
845 A  
B-43  
TYPICAL APPLICATIONS  
• Snubber diode for GTO  
Package  
Circuit configuration  
Single diode  
• High voltage freewheeling diode  
• Fast recovery rectifier applications  
MAJOR RATINGS AND CHARACTERISTICS  
VS-SD803C..C  
UNITS  
PARAMETER  
TEST CONDITIONS  
S10  
845  
S15  
845  
A
°C  
A
IF(AV)  
Ths  
55  
55  
1326  
25  
1326  
IF(RMS)  
Ths  
25  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
Range  
11 295  
11 830  
640  
11 295  
11 830  
640  
IFSM  
A
A
I2t  
583  
583  
VRRM  
trr  
400 to 1000  
1.0  
1200 to 1600  
1.5  
V
μs  
TJ  
25  
25  
°C  
TJ  
-40 to 125  
-40 to 125  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRSM, MAXIMUM  
VRRM, MAXIMUM REPETITIVE PEAK  
I
RRM MAXIMUM  
AT TJ = 125 °C  
mA  
VOLTAGE  
CODE  
NON-REPETITIVE PEAK REVERSE  
TYPE NUMBER  
REVERSE VOLTAGE  
V
VOLTAGE  
V
04  
08  
10  
12  
14  
16  
400  
800  
500  
900  
VS-SD803C..S10C  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
45  
VS-SD803C..S15C  
Revision: 14-Jan-14  
Document Number: 93180  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-SD803C10S10C相关器件

型号 品牌 获取价格 描述 数据表
VS-SD803C12S15C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 845A, 1200V V(RRM), Silicon,
VS-SD803C14S15C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 845A, 1400V V(RRM), Silicon,
VS-SD823C12S20C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 810A, 1200V V(RRM), Silicon,
VS-SD823C16S20C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 810A, 1600V V(RRM), Silicon,
VS-SD823C16S30C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 910A, 1600V V(RRM), Silicon,
VS-SD823C20S20C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 810A, 2000V V(RRM), Silicon,
VS-SD823C20S30C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 910A, 2000V V(RRM), Silicon,
VS-SD823C25S20C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 810A, 2500V V(RRM), Silicon,
VS-SD823C25S30C VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 910A, 2500V V(RRM), Silicon,
VS-SD853C30S50K VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 990A, 3000V V(RRM), Silicon, DO-200AC,