Datasheet > VS-QA300FA17

VS-QA300FA17

更新时间： 2024-11-22 14:54:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	165K
描述
Insulated Gen 2 Schottky Rectifier Module, 300 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-QA300FA17 数据手册

VS-QA300FA17

Vishay Semiconductors

www.vishay.com

Insulated Gen 2 Schottky Rectifier Module, 300 A

FEATURES

• Max. T_J= 175 °C

• Two fully independent diodes

• Fully insulated package

• Trench MOS Barrier Schottky technology

• Ultra low forward voltage drop

• Optimized for power conversion: welding and industrial

SMPS applications

SOT-227

• Easy to use and parallel

ADDITIONAL RESOURCES

• Industry standard outline

• Designed and qualified for industrial level

• UL approved file E78996

Application

Notes

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)per module at T_C= 132 °C

300 A

170 V

DESCRIPTION

V_R

The VS-QA300FA17 insulated modules integrate two state

of the art Trench MOS Schottky technology rectifiers in the

compact, industry standard SOT-227 package.

_FMat 100 A, T_C= 25 °C

0.79 V

Package

SOT-227

Two separate diodes, parallel

pin-out

These devices are thus intended for high frequency

converters and switching power supplies.

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

0.69

UNITS

V_F

T_J

T_J= 150 °C

Range

-55 to +175

°C

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

I_F(AV)

V_R

TEST CONDITIONS

VALUES

300

UNITS

Average forward current per module

Cathode to anode voltage

T_C= 132 °C

170

Continuous forward current per diode

Single pulse forward current per diode

Maximum power dissipation per diode

Non-repetitive avalanche energy per diode

RMS isolation voltage

I_F

T_C= 90 °C

330

I_FSM

T_C= 175 °C, t = 6 ms, square

T_C= 90 °C

1575

P_D

327

E_AS

T_J= 25 °C, I_AS= 27 A, L = 10 mH

Any terminal to case, t = 1 min

3700

V_ISOL

T_J, T_Stg

2500

Operating junction and storage temperatures

-55 to +175

°C

Revision: 18-Nov-2020

Document Number: 96194

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与VS-QA300FA17相关器件

型号	品牌	获取价格	描述	数据表
VSQS10A045	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
VSQS10A065	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
VSQS15A045	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
VSR	VISHAY	获取价格	Bulk Metal® Foil Technology Industrial Precis
VSR100	EMERSON-NETWORKPOWER	获取价格	Straln Rellef Boot
VSR100K00DB	VISHAY	获取价格	Fixed Resistor, Metal Foil, 0.3W, 100000ohm, 300V, 0.5% +/-Tol, -8,8ppm/Cel, 3011,
VSR101	EMERSON-NETWORKPOWER	获取价格	Straln Rellef Boot
VSR102	EMERSON-NETWORKPOWER	获取价格	Straln Rellef Boot
VSR102K00BB	VISHAY	获取价格	Fixed Resistor, Metal Foil, 0.25W, 102000ohm, 300V, 0.1% +/-Tol, -8,8ppm/Cel, 3011,
VSR103	EMERSON-NETWORKPOWER	获取价格	Straln Rellef Boot

与VS-QA300FA17相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-QA300FA17

VS-QA300FA17 数据手册

与VS-QA300FA17相关器件

与VS-QA300FA17相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-QA300FA17

VS-QA300FA17 数据手册

与VS-QA300FA17相关器件

与VS-QA300FA17相关文章

您还可以找

您在本页遇到什么问题？