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VS-QA200FA10

更新时间： 2024-11-22 17:02:11
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威世 - VISHAY /
页数 文件大小 规格书
5页 148K
描述
Insulated Gen 2 Schottky Rectifier Module, 200 A

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VS-QA200FA10  
Vishay Semiconductors  
www.vishay.com  
Insulated Gen 2 Schottky Rectifier Module, 200 A  
FEATURES  
• Max. TJ = 150 °C  
• Two fully independent diodes  
• Fully insulated package  
• Trench MOS Barrier Schottky technology  
• Ultra low forward voltage drop  
• Optimized for power conversion: welding and industrial  
SMPS applications  
SOT-227  
• Easy to use and parallel  
LINKS TO ADDITIONAL RESOURCES  
• Industry standard outline  
• Designed and qualified for industrial level  
• UL approved file E78996  
Application  
Notes  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV) per module at TC = 82 °C  
200 A  
DESCRIPTION  
VR  
100 V  
0.83 V  
The VS-QA200FA10 insulated modules integrate two state  
of the art Trench MOS Schottky technology rectifiers in the  
compact, industry standard SOT-227 package.  
VFM at 100 A, TC = 25 °C  
Package  
SOT-227  
Two separate diodes, parallel  
pin-out  
These devices are thus intended for high frequency  
converters and switching power supplies.  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
IF = 100 A, TJ = 150 °C  
Range  
VALUES  
0.67  
UNITS  
VF  
TJ  
V
-40 to +150  
°C  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
100  
UNITS  
Cathode to anode voltage  
VR  
V
per module  
per diode  
per module  
per diode  
T
C = 82 °C  
C = 82 °C  
200  
Average forward current  
IF(AV)  
T
100  
IF  
IF  
TC = 90 °C  
238  
A
Continuous forward current  
TC = 90 °C  
119  
Single pulse forward current per diode  
Maximum power dissipation per diode  
Non-repetitive avalanche energy per diode  
RMS isolation voltage  
IFSM  
PD  
TC = 150 °C, t = 6 ms, square  
TC = 90 °C  
765  
115  
W
mJ  
V
EAS  
TJ = 25 °C, L = 1 mH  
Any terminal to case, t = 1 min  
1312  
2500  
-40 to +150  
VISOL  
TJ, TStg  
Operating junction and storage temperatures  
°C  
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
UNITS  
Cathode to anode breakdown voltage  
VBR  
IR = 2 mA  
100  
-
1.03  
-
IF = 100 A  
-
-
-
-
-
0.83  
0.67  
0.07  
37  
V
Forward voltage  
VFM  
IF = 100 A, TJ = 150 °C  
VR = 100 V  
1.6  
-
Reverse leakage current  
Junction capacitance  
IRM  
CT  
mA  
pF  
TJ = 125 °C, VR = 100 V  
VR = 100 V, f = 1 MHz  
514  
-
Revision: 15-Dec-2023  
Document Number: 97112  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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