5秒后页面跳转
VS-MBRB1 PDF预览

VS-MBRB1

更新时间: 2024-11-21 12:17:11
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
5页 1967K
描述
Low forward voltage drop

VS-MBRB1 数据手册

 浏览型号VS-MBRB1的Datasheet PDF文件第2页浏览型号VS-MBRB1的Datasheet PDF文件第3页浏览型号VS-MBRB1的Datasheet PDF文件第4页浏览型号VS-MBRB1的Datasheet PDF文件第5页 
VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series  
VS-MBR15..CT-1PbF  
FEATURES  
• 150 °C TJ operation  
VS-MBRB15..CTPbF  
• Center tap TO-220 package  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
2
2
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
D2PAK  
TO-262  
DESCRIPTION  
The VS-MBR(B)15... center tap Schottky rectifier has been  
optimized for low reverse leakage at high temperature. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 7.5 A  
35 V/45 V  
VR  
IRM  
15 mA at 125 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
15  
UNITS  
Rectangular waveform  
A
V
35/45  
690  
tp = 5 μs sine  
A
VF  
7.5 Apk, TJ = 125 °C  
0.57  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-MBRB1535CTPbF  
VS-MBR1535CT-1PbF  
VS-MBRB1545CTPbF  
VS-MBR1545CT-1PbF  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 131 °C, rated VR  
VALUES  
UNITS  
per leg  
7.5  
15  
Maximum average  
forward current  
IF(AV)  
per device  
5 μs sine or 3 μs Following any rated load condition  
rect. pulse and with rated VRRM applied  
A
690  
Maximum peak one cycle  
non-repetitive surge  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
150  
7
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 3.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
www.kersemi.com  
1

与VS-MBRB1相关器件

型号 品牌 获取价格 描述 数据表
VS-MBRB1035HM3 VISHAY

获取价格

High Performance Schottky Rectifier, 10 A
VS-MBRB1035H-M3 VISHAY

获取价格

High Performance Schottky Rectifier, 10 A
VS-MBRB1035-M3 VISHAY

获取价格

High Performance Schottky Rectifier, 10 A
VS-MBRB1035TRLHM3 VISHAY

获取价格

High Performance Schottky Rectifier, 10 A
VS-MBRB1035TRL-M3 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3
VS-MBRB1035TRRHM3 VISHAY

获取价格

High Performance Schottky Rectifier, 10 A
VS-MBRB1035TRR-M3 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3
VS-MBRB1045HM3 VISHAY

获取价格

High Performance Schottky Rectifier, 10 A
VS-MBRB1045-M3 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3
VS-MBRB1045PBF VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, D2PAK-3