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VS-MBR735PBF PDF预览

VS-MBR735PBF

更新时间: 2024-11-21 08:18:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
7页 153K
描述
Schottky Rectifier, 7.5 A

VS-MBR735PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSFM-T2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.16Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:690 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:7.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:35 V最大反向电流:100 µA
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

VS-MBR735PBF 数据手册

 浏览型号VS-MBR735PBF的Datasheet PDF文件第2页浏览型号VS-MBR735PBF的Datasheet PDF文件第3页浏览型号VS-MBR735PBF的Datasheet PDF文件第4页浏览型号VS-MBR735PBF的Datasheet PDF文件第5页浏览型号VS-MBR735PBF的Datasheet PDF文件第6页浏览型号VS-MBR735PBF的Datasheet PDF文件第7页 
VS-MBR7...PbF Series, VS-MBR7...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 7.5 A  
FEATURES  
Base  
cathode  
• 150 °C TJ operation  
2
• High frequency operation  
• Low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
Cathode Anode  
TO-220AC  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
7.5 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
35 V, 45 V  
0.57 V  
VF at IF  
DESCRIPTION  
I
RM max.  
15 mA at 125 °C  
150 °C  
The VS-MBR7... Schottky rectifier has been optimized for  
low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
7 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
7.5  
UNITS  
Rectangular waveform  
A
V
35/45  
tp = 5 μs sine  
7.5 Apk, TJ = 125 °C  
Range  
690  
A
VF  
0.57  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-MBR735PbF  
VS-MBR735-N3  
VS-MBR745PbF  
VS-MBR745-N3 UNITS  
Maximum DC reverse voltage  
VR  
35  
35  
45  
45  
V
Maximum working peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 131 °C, rated VR  
VALUES UNITS  
Maximum average forward current  
IF(AV)  
7.5  
A
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
690  
VRRM applied  
Non-repetitive peak surge current  
IFSM  
A
Surge applied at rated load condition half wave  
single phase 60 Hz  
150  
7
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 3.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Revision: 30-Aug-11  
Document Number: 94299  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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