VS-MBR735-M3, VS-MBR745-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 7.5 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
1
3
Cathode
Anode
TO-220AC 2L
• Guard ring for enhanced ruggedness and long term
reliability
PRIMARY CHARACTERISTICS
• Designed and qualified according to JEDEC®-JESD 47
IF(AV)
7.5 A
35 V, 45 V
0.57 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VR
VF at IF
DESCRIPTION
I
RM max.
15 mA at 125 °C
150 °C
The VS-MBR7... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
TJ max.
EAS
7 mJ
Package
TO-220AC 2L
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
7.5
UNITS
IF(AV)
VRRM
IFSM
VF
Rectangular waveform
A
V
35/45
tp = 5 μs sine
690
A
7.5 Apk, TJ = 125 °C
0.57
V
TJ
Range
-65 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-MBR735-M3
VS-MBR745-M3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
35
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 131 °C, rated VR
VALUES
UNITS
Maximum average forward current
IF(AV)
7.5
A
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated
RRM applied
690
V
Non-repetitive peak surge current
IFSM
A
Surge applied at rated load condition half wave
single phase 60 Hz
150
7
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 2 A, L = 3.5 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
Revision: 28-Feb-2023
Document Number: 96268
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000