Datasheet > VS-MBR7

VS-MBR7

更新时间： 2024-11-22 01:22:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	154K
描述
High frequency operation

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-MBR7 数据手册

VS-MBR7...PbF Series, VS-MBR7...-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 7.5 A

FEATURES

Base

cathode

• 150 °C T_Joperation

• High frequency operation

• Low forward voltage drop

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Cathode Anode

TO-220AC

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AC

7.5 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

35 V, 45 V

0.57 V

V_Fat I_F

DESCRIPTION

_RMmax.

15 mA at 125 °C

150 °C

The VS-MBR7... Schottky rectifier has been optimized for

low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

Diode variation

E_AS

Single die

7 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

7.5

UNITS

Rectangular waveform

35/45

t_p= 5 μs sine

7.5 A_pk, T_J= 125 °C

Range

690

V_F

0.57

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-MBR735PbF

VS-MBR735-N3

VS-MBR745PbF

VS-MBR745-N3 UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse

voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 131 °C, rated V_R

VALUES UNITS

Maximum average forward current

I_F(AV)

7.5

Following any rated load

condition and with rated

5 µs sine or 3 µs rect. pulse

690

V_RRMapplied

Non-repetitive peak surge current

I_FSM

Surge applied at rated load condition half wave

single phase 60 Hz

150

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 2 A, L = 3.5 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 30-Aug-11

Document Number: 94299

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与VS-MBR7相关器件

型号	品牌	获取价格	描述	数据表
VS-MBR735-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 7.5 A
VS-MBR735-N3	VISHAY	获取价格	Schottky Rectifier, 7.5 A
VS-MBR735PBF	VISHAY	获取价格	Schottky Rectifier, 7.5 A
VS-MBR735TRLPBF	VISHAY	获取价格	7.5A, 35V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3
VS-MBR735TRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 35V V(RRM), Silicon, HALOGEN FREE AND
VS-MBR745-N3	VISHAY	获取价格	Schottky Rectifier, 7.5 A
VS-MBR745PBF	VISHAY	获取价格	Schottky Rectifier, 7.5 A
VS-MBR745TRLPBF	VISHAY	获取价格	暂无描述
VS-MBR745TRRPBF	VISHAY	获取价格	暂无描述
VS-MBR7PBF	VISHAY	获取价格	High frequency operation

与VS-MBR7相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-MBR7

VS-MBR7 数据手册

与VS-MBR7相关器件

与VS-MBR7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-MBR7

VS-MBR7 数据手册

与VS-MBR7相关器件

与VS-MBR7相关文章

您还可以找

您在本页遇到什么问题？