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VS-MBR40L15CW-N3 PDF预览

VS-MBR40L15CW-N3

更新时间: 2024-11-21 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 161K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 15V V(RRM), Silicon, TO-247AC,

VS-MBR40L15CW-N3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:26 weeks
风险等级:5.6应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.52 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:330 A
元件数量:2相数:1
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:15 V最大反向电流:10000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-MBR40L15CW-N3 数据手册

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VS-MBR40L15CWPbF, VS-MBR40L15CW-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 20 A  
FEATURES  
Base  
common  
• 125 °C TJ operation (VR < 5 V)  
• Optimized for OR-ing applications  
• Ultralow forward voltage drop  
• High frequency operation  
cathode  
2
• Guard ring for enhanced ruggedness and long  
term reliability  
3
2
1
• High  
purity,  
high  
temperature  
epoxy  
1
3
Available  
Anode  
1
Anode  
2
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
TO-247AC  
Common  
cathode  
• Designed and qualified according to JEDEC-JESD47  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 20 A  
15 V  
DESCRIPTION  
IF(AV)  
The VS-MBR40L15CW... center tap Schottky rectifier  
module has been optimized for ultralow forward voltage  
drop specifically for the OR-ing of parallel power supplies.  
The proprietary barrier technology allows for reliable  
operation up to 125 °C junction temperature. Typical  
applications are in parallel switching power supplies,  
converters, reverse battery protection, and redundant  
power subsystems.  
VR  
VF at IF  
0.34 V  
I
RM max.  
600 mA at 100 °C  
125 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
700  
A
VF  
20 Apk, TJ = 125 °C (per leg, typical)  
0.26  
V
TJ  
Range  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL TEST CONDITIONS  
VS-MBR40L15CWPbF  
VS-MBR40L15CW-N3  
15  
UNITS  
Maximum DC reverse voltage  
VR  
TJ = 100 °C  
15  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current   
See fig. 5  
per leg  
20  
40  
IF(AV)  
50 % duty cycle, at TC = 86 °C, rectangular waveform  
per device  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
700  
Following any rated  
load condition and with  
rated VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
330  
5
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 6 mH  
mJ  
A
Current decaying linearly to zero in 1 μs   
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Revision: 17-Jul-13  
Document Number: 94297  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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