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VS-MBR4045WT-N3 PDF预览

VS-MBR4045WT-N3

更新时间: 2024-11-21 21:05:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 160K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-MBR4045WT-N3 技术参数

生命周期:Active包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.1其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.78 V
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:265 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:45 V最大反向电流:1750 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-MBR4045WT-N3 数据手册

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VS-MBR4045WTPbF, VS-MBR4045WT-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 20 A  
FEATURES  
Base  
common  
• 150 °C TJ operation  
cathode  
2
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
1
3
Anode  
Anode  
2
TO-247AC  
2
1
• Compliant to RoHS Directive 2002/95/EC  
Common  
cathode  
• Designed and qualified according to JEDEC-JESD47  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 20 A  
45 V  
DESCRIPTION  
IF(AV)  
The VS-MBR4045WT... center tap Schottky rectifier has  
been optimized for very low forward voltage drop, with  
moderate leakage. The proprietary barrier technology allows  
for reliable operation up to 150 °C junction temperature.  
Typical applications are in switching power supplies,  
converters, freewheeling diodes, and reverse battery  
protection.  
VR  
VF at IF  
0.56 V  
I
RM max.  
85 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform (per device)  
A
TC = 125 °C (per leg)  
40  
45  
V
A
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
1020  
0.56  
VF  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBR4045WTPbF  
45  
VS-MBR4045WT-N3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
VALUES UNITS  
per leg  
20  
40  
Maximum average  
forward current  
TC = 125 °C, 50 % duty cycle, rectangular waveform  
Rated VR, square wave, 20 kHz, TC = 125 °C  
per device  
Peak repetitive forward current per leg  
40  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
1020  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
265  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 3 A, L = 4.40 mH  
20  
3
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 30-Aug-11  
Document Number: 94295  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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