VS-E5TH2112S2LHM3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 20 A FRED Pt® G5
FEATURES
Base
cathode
4
• Minimum creepage and clearance distances are
5.2 mm and 5.4 mm respectively
4
• Hyperfast and optimized Qrr
• Best in class forward voltage drop and switching
losses trade off
• Optimized for high speed operation
• 175 °C maximum operating junction temperature
• Polyimide passivation
3
1
N/C
Anode
D2PAK 2L (TO-263AB 2L)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
LINKS TO ADDITIONAL RESOURCES
3
•
AEC-Q101 qualified meets JESD 201 class 2 whisker test
D
3D Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
Featuring a unique combination of low conduction and
switching losses, this rectifier is the right choice for high
frequency converters, both soft switched / resonant.
Specifically designed to improve efficiency of PFC and
output rectification stages of EV / HEV battery charging
stations, booster stage of solar inverters and UPS
applications, these devices are perfectly matched to
operate with MOSFETs or high speed IGBTs.
IF(AV)
20 A
1200 V
1.88 V
37 ns
VR
VF at IF at 125 °C
trr
TJ max.
175 °C
D2PAK 2L (TO-263AB 2L)
Package
Circuit configuration
Single
MECHANICAL DATA
Case: D2PAK 2L (TO-263AB 2L)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
TC = 103 °C
VALUES
1200
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Repetitive peak forward current
Non-repetitive peak surge current
Operating junction and storage temperature
V
IF(AV)
20
IFRM
TC = 103 °C, D = 0.50, f = 20 kHz
TC = 45 °C, tp = 10 ms, sine wave
32
A
IFSM
125
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
VBR
VR
,
Breakdown voltage, blocking voltage
IR = 100 μA
1200
-
-
V
IF = 20 A
-
-
-
-
-
-
2.04
1.88
-
2.66
Forward voltage
VF
IR
IF = 20 A, TJ = 125 °C
VR = VR rated
-
50
μA
Reverse leakage current
TJ = 125 °C, VR = VR rated
VR = 200 V
-
500
Junction capacitance
Series inductance
CT
LS
10
8
-
-
pF
nH
Measured to lead 5 mm from package body
Revision: 12-Jun-2023
Document Number: 96935
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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