Datasheet > VS-C4PU3006L-N3

VS-C4PU3006L-N3

更新时间： 2024-02-23 09:10:52

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	163K
描述
Ultrafast Soft Recovery Diode, 2 x 15 A FRED Pt? Gen 4

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VS-C4PU3006L-N3 数据手册

VS-C4PU3006L-N3

Vishay Semiconductors

www.vishay.com

Ultrafast Soft Recovery Diode,

2 x 15 A FRED Pt^®Gen 4

Base

FEATURES

• Gen 4 FRED Pt^®technology

common

cathode

• Low I_RRMand reverse recovery charge

• Very low forward voltage drop

• Polyimide passivated chip for high reliability

standard

• 175 °C operating junction temperature

• Designed and qualified according to JEDEC^®-JESD 47

TO-247AD 3L

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

PRIMARY CHARACTERISTICS

Gen 4 Fred technology, state of the art, ultralow V_F, soft

switching optimized for Discontinuous (Critical) Mode (DCM)

and IGBT F/W diode.

I_F(AV)

2 x 15 A

V_R

600 V

The minimized conduction loss, optimized stored charge

and low recovery current minimize the switching losses and

reduce power dissipation in the switching element and

snubbers.

V_Fat I_F

1.12 V

_rrtyp.

See Recovery table

175 °C

T_Jmax.

Package

TO-247AD 3L

Common cathode



Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

600

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current, per leg

Operating junction and storage temperature

I_F(AV)

T_C= 146 °C

T_C= 25 °C, t_p= 8.3 ms, half sine wave

I_FSM

200

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

600

TYP.

MAX. UNITS

Breakdown voltage, blocking voltage

V_BR, V_R

I_R= 100 μA

1.55

I_F= 15 A

1.32

1.53

1.17

1.42

1.12

1.38

I_F= 30 A

I_F= 15 A, T_J= 125 °C

I_F= 30 A, T_J= 125 °C

I_F= 15 A, T_J= 150 °C

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Forward voltage

V_F

1.28

500

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 125 °C, V_R= V_Rrated

V_R= 600 V

C_T

Revision: 19-Feb-2019

Document Number: 95934

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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