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VS-APU6006LHN3 PDF预览

VS-APU6006LHN3

更新时间: 2024-11-06 14:56:03
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威世 - VISHAY /
页数 文件大小 规格书
7页 174K
描述
Ultrafast Soft Recovery Diode, 60 A FRED Pt?

VS-APU6006LHN3 数据手册

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VS-EPU6006LHN3, VS-APU6006LHN3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Soft Recovery Diode, 60 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• Low forward voltage drop  
2
• 175 °C operating junction temperature  
1
1
• AEC-Q101 qualified meets JESD 201 class 1  
whisker test  
2
3
3
TO-247AD 3L  
Base cathode  
2
TO-247AD 2L  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Base cathode  
2
DESCRIPTION / APPLICATIONS  
VS-EPU60... series are the state of the art ultrafast recovery  
rectifiers designed with optimized performance of forward  
voltage drop and ultrafast recovery time.  
1
3
1
3
Cathode  
Anode  
Anode  
Anode  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
VS-EPU6006LHM3  
VS-APU6006LHM3  
PRIMARY CHARACTERISTICS  
These devices are intended for use in the output rectification  
stage of SMPS, welding, UPS, DC/DC converters as well as  
freewheeling diodes in low voltage inverters and chopper  
motor drives.  
IF(AV)  
60 A  
VR  
600 V  
VF at IF  
1.05 V  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
t
rr typ.  
32 ns  
175 °C  
TJ max.  
Package  
TO-247AD 2L, TO-247AD 3L  
Single  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current in DC  
Single pulse forward current  
V
IF(AV)  
TC = 116 °C  
TC = 25 °C, tp = 8.3 ms; half sine wave  
60  
A
IFSM  
600  
Operating junction and storage temperatures  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
600  
-
-
IF = 60 A  
-
-
-
-
-
-
1.2  
1.1  
1.05  
0.2  
-
1.5  
1.3  
1.2  
30  
V
Forward voltage  
VF  
IF = 60 A, TJ = 125 °C  
IF = 60 A, TJ = 175 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
200  
-
CT  
38  
Revision: 10-Oct-2018  
Document Number: 95957  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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