Datasheet > VS-APH3006LHN3

VS-APH3006LHN3

更新时间： 2023-12-06 20:02:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	153K
描述
Hyperfast Rectifier, 30 A FRED Pt?

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VS-APH3006LHN3 数据手册

VS-APH3006LHN3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

• Low forward voltage drop

• Hyperfast soft recovery time

• 175 °C operating junction temperature

Base cathode

2, 4

• Designed and qualified according to

commercial qualification

• AEC-Q101 qualified, meets JESD 201 class 2

whisker test

Anode

TO-247AD 3L

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

PRODUCT SUMMARY

Hyperfast recovery rectifiers designed with optimized

performance of forward voltage drop, hyperfast recovery

time, and soft recovery.

Package

TO-247AD 3L

I_F(AV)

30 A

600 V

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

V_R

V_Fat I_F

1.4 V

_rrtyp.

26 ns

These devices are intended for use in PFC Boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

T_Jmax.

175 °C

Single die

Diode variation

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

MAX.

600

UNITS

Repetitive peak reverse voltage

Average rectified forward current

T_C= 112 °C

T_C= 25 °C, t_p= 8.3 ms half sine wave;

connecting two anode pins

Non-repetitive peak surge current

I_FSM

240

Operating junction and storage

temperatures

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

2.0

1.4

0.02

2.65

1.8

300

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 01-Feb-17

Document Number: 95956

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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