Datasheet > VS-8CVH02HM3

VS-8CVH02HM3

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	159K
描述
Hyperfast Rectifier, 2 x 4 A FRED Pt?

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VS-8CVH02HM3 数据手册

VS-8CVH02HM3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 2 x 4 A FRED Pt^®

FEATURES

• Hyperfast recovery time

eSMP^®Series

Base

common

cathode

• 175 °C max. operating junction temperature

• Low forward voltage drop reduced Q_rrand

soft recovery

• Low leakage current

• Very low profile - typical height of 1.3 mm

• Polyimide passivation for high reliability

standard

• Ideal for automated placement

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Common

cathode

Anode

SlimDPAK (TO-252AE)

• AEC-Q101 qualified, meets JESD 201 class 2 whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

3D Models

DESCRIPTION / APPLICATIONS

State of the art hyper fast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce

over dissipation in the switching element and snubbers.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 4 A

200 V

0.71 V

16 ns

V_R

V_Fat I_F

t_rr(typ.)

T_Jmax.

175 °C

Package

SlimDPAK (TO-252AE)

Common cathode

Circuit configuration

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

200

per leg

Average rectified forward current

I_F(AV)

T_C= 167 °C

T_J= 25 °C, 10 ms sine pulse wave

per device

Non-repetitive peak surge current per leg

Operating junction and storage temperatures

I_FSM

100

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

V_BR, V_R

I_R= 100 μA

200

1.0

1.14

0.80

1.0

I_F= 4 A

0.88

0.97

0.71

0.8

I_F= 8 A

Forward voltage per leg

V_F

I_F= 4 A, T_J= 150 °C

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current per leg

I_R

T_J= 125 °C, V_R= V_Rrated

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

μA

Junction capacitance per leg

Revision: 21-Apr-2023

C_T

Document Number: 95667

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-8CVH02HM3相关器件

型号	品牌	获取价格	描述	数据表
VS-8CVH02HM3/I	VISHAY	获取价格	DIODE GEN PURPOSE 200V SLIMDPAK
VS-8CVH02-M3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 4 A FRED Pt?
VS-8CWH02FNHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 4A, 200V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-8CWH02FN-M3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 4 A FRED PtÂ®
VS-8CWH02FNTRHM3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 4 A FRED PtÂ®
VS-8CWH02FNTRL-M3	VISHAY	获取价格	DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8CWH02FNTR-M3	VISHAY	获取价格	DIODE STANDARD 200V 4A DPAK
VS-8CWH02FNTRRHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 4A, 200V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-8CWH02FNTRR-M3	VISHAY	获取价格	DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8DKH02HM3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 4 A FRED Pt?

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