Datasheet > VS-80CPQ020-N3

VS-80CPQ020-N3

更新时间： 2023-12-06 20:10:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	158K
描述
High Performance Schottky Rectifier, 2 x 40 A

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VS-80CPQ020-N3 数据手册

VS-80CPQ020-N3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 2 x 40 A

Base

FEATURES

common

cathode

• 150 °C T_Joperation

• Optimized for 3.3 V application

• Ultralow forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long

term reliability

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

Anode

TO-247AC 3L

Common

cathode

• Designed and qualified according to JEDEC^®-JESD 47

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 40 A

DESCRIPTION

V_R

20 V

This center tap Schottky rectifier has been optimized for

ultralow forward voltage drop specifically for 3.3 V output

power supplies. The proprietary barrier technology allows

for reliable operation up to 150 °C junction temperature.

Typical applications are in parallel switching power supplies,

converters, reverse battery protection, and redundant

power subsystems.

V_Fat I_F

0.36 V

_RMmax.

1100 mA at 125 °C

150 °C

T_Jmax.

E_AS

27 mJ

Package

TO-247AC 3L

Common cathode

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

t_p= 5 μs sine

2200

40 A_pk, T_J= 150 °C (per leg)

Range

0.32

T_J

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-80CPQ020-N3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 138 °C, rectangular waveform

VALUES

UNITS

per leg

Maximum average

forward current

I_F(AV)

per device

Following any rated

load condition and with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

2200

Maximum peak one cycle

I_FSM

non-repetitive surge current per leg

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 6 A, L = 1.5 mH

500

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 03-Jan-18

Document Number: 96464

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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