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VS-70HFL60S02M PDF预览

VS-70HFL60S02M

更新时间: 2024-11-23 19:45:43
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管
页数 文件大小 规格书
14页 214K
描述
Rectifier Diode,

VS-70HFL60S02M 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DO-5, 1 PINReach Compliance Code:unknown
Factory Lead Time:18 weeks风险等级:5.63
其他特性:FREE WHEELING DIODE应用:FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.85 VJEDEC-95代码:DO-203AB
JESD-30 代码:O-MUPM-D1JESD-609代码:e3
最大非重复峰值正向电流:730 A元件数量:1
相数:1端子数量:1
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:70 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:100 µA最大反向恢复时间:0.2 µs
表面贴装:NO端子面层:Tin (Sn) - with Nickel (Ni) barrier
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-70HFL60S02M 数据手册

 浏览型号VS-70HFL60S02M的Datasheet PDF文件第2页浏览型号VS-70HFL60S02M的Datasheet PDF文件第3页浏览型号VS-70HFL60S02M的Datasheet PDF文件第4页浏览型号VS-70HFL60S02M的Datasheet PDF文件第5页浏览型号VS-70HFL60S02M的Datasheet PDF文件第6页浏览型号VS-70HFL60S02M的Datasheet PDF文件第7页 
VS-40HFL, VS-70HFL, VS-85HFL Series  
www.vishay.com  
Vishay Semiconductors  
Fast Recovery Diodes  
(Stud Version), 40 A, 70 A, 85 A  
FEATURES  
• Short reverse recovery time  
• Low stored charge  
• Wide current range  
• Excellent surge capabilities  
• Stud cathode and stud anode versions  
• Types up to 100 VRRM  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DO-5 (DO-203AB)  
TYPICAL APPLICATIONS  
• DC power supplies  
• Inverters  
PRIMARY CHARACTERISTICS  
• Converters  
IF(AV)  
40 A, 70 A, 85 A  
• Choppers  
Package  
DO-5 (DO-203AB)  
Single  
• Ultrasonic systems  
• Freewheeling diodes  
Circuit Configuration  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
40HFL  
70HFL  
70  
85HFL  
85  
UNITS  
A
40  
IF(AV)  
T
C maximum  
85  
85  
85  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
400  
700  
1100  
IFSM  
I2t  
A
420  
730  
1151  
800  
2450  
6050  
A2s  
730  
2240  
5523  
I2t  
11 300  
100 to 1000  
34 650  
100 to 1000  
85 560  
100 to 1000  
I2s  
VRRM  
Range  
Range  
V
See Recovery  
Characteristics table  
See Recovery  
Characteristics table  
See Recovery  
Characteristics table  
trr  
ns  
°C  
TJ  
-40 to +125  
-40 to +125  
-40 to +125  
Revision: 11-Jan-18  
Document Number: 93150  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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