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VS-6TQ035STRL-M3

更新时间： 2024-11-26 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
10页 249K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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VS-6TQ035STRL-M3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.69
其他特性：FREE WHEELING DIODE应用：GENERAL PURPOSE
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.73 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：140 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260最大重复峰值反向电压：35 V
最大反向电流：800 µA表面贴装：YES
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

VS-6TQ035STRL-M3 数据手册

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VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 6 A  
FEATURES  
Base  
cathode  
• 175 °C TJ operation  
2
• High frequency operation  
• Low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
1
3
1
3
N/C  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
D2PAK (TO-263AB)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
IF(AV)  
6 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
VF at IF  
35 V, 40 V, 45 V  
0.53 V  
IRM  
7 mA at 125 °C  
175 °C  
DESCRIPTION  
TJ max.  
The VS-6TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
EAS  
8 mJ  
D2PAK (TO-263AB)  
Package  
Circuit configuration  
Single  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
6
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
Range  
A
V
35 to 45  
690  
tp = 5 μs sine  
6 Apk, TJ = 125 °C  
Range  
A
0.53  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-6TQ035S-M3  
35  
VS-6TQ040S-M3  
VS-6TQ045S-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 164 °C, rectangular waveform  
6
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Following any rated load  
condition and with rated  
690  
140  
8
IFSM  
EAS  
IAR  
VRRM applied  
Non-repetitive avalanche energy  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current  
1.20  
Revision: 02-Nov-17  
Document Number: 94945  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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