Datasheet > VS-63CTQ100-M3

VS-63CTQ100-M3

更新时间： 2023-12-06 20:02:42

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	164K
描述
High Performance Schottky Rectifier, 2 x 30 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-63CTQ100-M3 数据手册

VS-63CTQ100-M3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 2 x 30 A

FEATURES

Base

common

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified according to JEDEC^®-JESD 47

Anode

TO-220AB 3L

Common

cathode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 30 A

100 V

V_R

DESCRIPTION

V_Fat I_F

0.69 V

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

_RMmax.

20 mA at 125 °C

175 °C

T_Jmax.

E_AS

11.25 mJ

Package

TO-220AB 3L

Circuit configuration

Common cathode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FRM

I_FSM

V_F

Rectangular waveform (per device)

100

T_C= 139 °C (per leg)

t_p= 5 μs sine

1500

30 A_pk, T_J= 125 °C

Range

0.69

T_J

-65 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-63CTQ100-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

100

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

per leg

Maximum average forward

current

I_F(AV)

I_FRM

I_FSM

50 % duty cycle at T_C= 139 °C, rectangular waveform

per device

Peak repetitive forward current per leg

Rated V_R, square wave, 20 kHz, T_C= 140 °C

Following any rated load

condition and with rated

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

1500

300

Maximum peak one cycle non-repetitive

surge current per leg

V_RRMapplied

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 0.75 A, L = 40 mH

11.25

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.75

Revision: 28-Feb-2023

Document Number: 96256

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

下载PDF

与VS-63CTQ100-M3相关器件

型号	品牌	描述	获取价格	数据表
VS-63CTQ100-N3	VISHAY	Schottky Rectifier	获取价格
VS-63CTQ100PBF	VISHAY	Schottky Rectifier, 2 x 30 A	获取价格
VS-63CTQ100PBF_15	VISHAY	Schottky Rectifier	获取价格
VS6451	STMICROELECTRONICS	Ultra small reflowable CIF+ camera module	获取价格
VS6451_07	STMICROELECTRONICS	Ultra small CIF+ reflowable camera module	获取价格
VS6451R0BA/T2	STMICROELECTRONICS	Ultra small reflowable CIF+ camera module	获取价格