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VS-5EWH06FNTRL-M3 PDF预览

VS-5EWH06FNTRL-M3

更新时间： 2024-09-18 21:14:03
品牌 Logo 应用领域
威世 - VISHAY 高帧率高马力二极管
页数 文件大小 规格书
7页 165K
描述
DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode

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VS-5EWH06FNTRL-M3 技术参数

生命周期：Active零件包装代码：TO-252AA
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.37
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用：HFRHP
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.4 VJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2最大非重复峰值正向电流：70 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.025 µs子类别：Rectifier Diodes
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-5EWH06FNTRL-M3 数据手册

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VS-5EWH06FN-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 5 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr and soft  
recovery  
2, 4  
• 175 °C maximum operating junction temperature  
• For PFC CRM/CCM operation  
• Low forward voltage drop  
1
N/C  
3
Anode  
• Low leakage current  
TO-252AA (D-PAK)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
DESCRIPTION / APPLICATIONS  
Package  
TO-252AA (D-PAK)  
5 A  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
IF(AV)  
VR  
600 V  
VF at IF  
1.2 V  
trr (typ.)  
TJ max.  
Diode variation  
18 ns  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 150 °C  
5
IFSM  
TJ = 25 °C  
70  
10  
A
IFM  
TC = 150 °C, f = 20 kHz, d = 50 %  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
VBR  
VR  
,
IR = 100 μA  
IF = 5 A  
600  
-
-
blocking voltage  
V
-
-
-
-
-
-
1.54  
1.20  
-
1.85  
1.40  
5
Forward voltage  
VF  
IR  
IF = 5 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
130  
-
Junction capacitance  
Series inductance  
CT  
LS  
3.5  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 04-Oct-16  
Document Number: 93245  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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VS-5EWH06FNTRL-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-5EWH06FN-M3 VISHAY

完全替代

 DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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