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VS-4EVH01-M3

更新时间： 2024-09-16 14:54:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 158K
描述
Hyperfast Rectifier, 4 A FRED Pt?

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VS-4EVH01-M3 数据手册

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VS-4EVH01-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 4 A FRED Pt®  
FEATURES  
eSMP® Series  
Heatsink  
k
• Hyperfast recovery time  
• 175 °C max. operating junction temperature  
• Low forward voltage drop reduced Qrr and soft  
recovery  
k
• Low leakage current  
1
2
1
• Very low profile - typical height of 1.3 mm  
• Ideal for automated placement  
Pin 1  
Pin 2  
2
• Polyimide passivation for high reliability standard  
SlimDPAK (TO-252AE)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
LINKS TO ADDITIONAL RESOURCES  
• Meets JESD 201 class 2 whisker test  
3
D
3
D
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3D Models  
DESCRIPTION / APPLICATIONS  
State of the art hyper fast recovery rectifiers with optimized  
performance of forward voltage drop and hyper fast  
recovery time.  
The planar structure and the platinum doped lifetime control  
guarantee the best overall performance, ruggedness, and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters, or as freewheeling  
diodes. Their extremely optimized stored charge and low  
recovery current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
PRIMARY CHARACTERISTICS  
IF(AV)  
4 A  
VR  
100 V  
0.71 V  
16 ns  
175 °C  
VF at IF  
trr (typ.)  
TJ max.  
Package  
SlimDPAK (TO-252AE)  
Single  
Circuit configuration  
MECHANICAL DATA  
Case: SlimDPAK (TO-252AE)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
100  
V
IF(AV)  
TC = 167 °C  
TJ = 25 °C, 10 ms sine pulse wave  
4
A
IFSM  
100  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR, VR  
IR = 100 μA  
100  
-
0.88  
0.71  
-
-
1.0  
0.80  
3
IF = 4 A  
-
-
-
-
-
V
Forward voltage  
VF  
IF = 4 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 100 V  
-
80  
-
CT  
17  
Revision: 21-Apr-2023  
Document Number: 96100  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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