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VS-4ESH02HM3/86A

更新时间： 2024-09-15 22:54:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 143K
描述
DIODE GEN PURP 200V 4A TO277A

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VS-4ESH02HM3/86A 数据手册

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VS-4ESH02HM3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 4 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr, and  
soft recovery  
®
eSMP Series  
K
• 175 °C maximum operating junction  
temperature  
Anode 1  
Anode 2  
K
Cathode  
• Specified for output and snubber operation  
• Low forward voltage drop  
1
2
• Low leakage current  
SMPC (TO-277A)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
PRIMARY CHARACTERISTICS  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness, and  
reliability characteristics.  
IF(AV)  
4 A  
VR  
200 V  
0.73 V  
27 ns  
175 °C  
VF at IF  
trr (typ.)  
TJ max.  
These devices are intended for use in snubber, boost,  
lighting, piezo-injection, as high frequency rectifiers and  
freewheeling diodes.  
Package  
SMPC (TO-277A)  
Single  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element.  
Circuit configuration  
MECHANICAL DATA  
Case: SMPC (TO-277A)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
200  
V
IF(AV)  
TSp = 165 °C  
TJ = 25 °C  
4
A
IFSM  
130  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR,VR  
IR = 100 μA  
200  
-
0.86  
0.73  
-
-
0.93  
0.79  
2
IF = 4 A  
-
-
-
-
-
V
Forward voltage  
VF  
IF = 4 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
2
10  
-
CT  
23  
Revision: 19-Jan-2021  
Document Number: 94979  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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