Datasheet > VS-4ESH01-M3

VS-4ESH01-M3

更新时间： 2024-09-16 14:46:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	138K
描述
Hyperfast Rectifier, 4 A FRED Pt?

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VS-4ESH01-M3 数据手册

VS-4ESH01-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 4 A FRED Pt^®

FEATURES

• Hyperfast recovery time, reduced Q_rr, and soft

recovery

eSMP Series

• 175 °C maximum operating junction temperature

• Specified for output and snubber operation

• Low forward voltage drop

Anode 1

Anode 2

Cathode

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMPC (TO-277A)

• Meets JESD 201 class 2 whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

DESCRIPTION / APPLICATIONS

3D Models

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

PRIMARY CHARACTERISTICS

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

I_F(AV)

4 A

V_R

100 V

0.73 V

27 ns

175 °C

V_Fat I_F

t_rr(typ.)

T_Jmax.

These devices are intended for use in snubber, boost,

lighting, as high frequency rectifiers and freewheeling

diodes.

Package

SMPC (TO-277A)

Single

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

Circuit configuration

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

100

I_F(AV)

T_Sp= 165 °C

T_J= 25 °C

I_FSM

130

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

100

I_F= 4 A

0.86

0.73

0.93

0.79

Forward voltage

V_F

I_F= 4 A, T_J= 125 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 125 °C, V_R= V_Rrated

V_R= 100 V

C_T

Revision: 19-Jan-2021

Document Number: 94998

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-4ESH01-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-4ESH02HM3	VISHAY	获取价格	Hyperfast Rectifier, 4 A FRED Pt?
VS-4ESH02HM3/86A	VISHAY	获取价格	DIODE GEN PURP 200V 4A TO277A
VS-4ESH02HM3/87A	VISHAY	获取价格	DIODE GEN PURP 200V 4A TO277A
VS-4ESH02-M3	VISHAY	获取价格	Hyperfast Rectifier, 4 A FRED Pt?
VS-4EVH01HM3	VISHAY	获取价格	Hyperfast Rectifier, 4 A FRED Pt?
VS-4EVH01-M3	VISHAY	获取价格	Hyperfast Rectifier, 4 A FRED Pt?
VS-4EVH02HM3	VISHAY	获取价格	Hyperfast Rectifier, 4 A FRED Pt?
VS-4EVH02-M3	VISHAY	获取价格	Hyperfast Rectifier, 4 A FRED Pt?
VS-4EVH02-M3/I	VISHAY	获取价格	DIODE GEN PURPOSE 200V SLIMDPAK
VS-4EWH02FNHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, TO-252AA, DPAK-3/2

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